A Built-In Self-Test Structure (BIST) for Resistive RAMs characterization: Application to bipolar OxRRAM

Author:

Aziza H.,Bocquet M.,Moreau M.,Portal J-M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

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3. Wan Gee Kim, et al., Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide. In: European Solid-State Device Research Conference; 2010. p. 400–3.

4. Pairing of cation vacancies and gap-state creation in TiO2 and HfO2;Hyo-Shin Ahnl;Appl Phys Lett,2007

5. Zaho WS, et al. Crossbar architecture based on 2R complementary resistive switching memory cell. In: Proceedings of IEEE international symposium on nanoscale architectures (NANOARCH); 2012. p. 85–92.

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1. Unary Coding and Variation-Aware Optimal Mapping Scheme for Reliable ReRAM-Based Neuromorphic Computing;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2021-12

2. Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation;2020 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT);2020-10-19

3. Post-P&R Performance and Power Analysis for RRAM-Based FPGAs;IEEE Journal on Emerging and Selected Topics in Circuits and Systems;2018-09

4. A High-Performance FPGA Architecture Using One-Level RRAM-Based Multiplexers;IEEE Transactions on Emerging Topics in Computing;2017-04-01

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