Jump test for metallic CNTs in CNFET-based SRAM-Reference-Cited by-同舟云学术

Jump test for metallic CNTs in CNFET-based SRAM

Published:2015-06-07 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 52nd Annual Design Automation Conference
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Author:

Xie Feng¹,Liang Xiaoyao¹,Xu Qiang²,Chakrabarty Krishnendu³,Jing Naifeng¹,Jiang Li⁴

Affiliation:

1. Shanghai Jiao Tong University, Shanghai, China

2. The Chinese University of Hong Kong, Shatin, N.T., Hong Kong

3. Duke University, Durham, NC

4. Shanghai Jiao Tong University, Shanghai, China and State Key Laboratory of High-end Server & Storage Technology, China

Funder

Program of China National 1000 Young Talent Plan

Shanghai science and Technology Committee

National Natural Science Foundation of China

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/2744769.2744864

Reference27 articles.

1. "International technology roadmap for semiconductors " 2008. {Online}. Available: http://www.itrs.net/ "International technology roadmap for semiconductors " 2008. {Online}. Available: http://www.itrs.net/

2. Carbon nanotube electronics

3. Modeling the effect of statistical variations in length and diameter of randomly oriented CNTs on the properties of CNT reinforced nanocomposites

4. A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking

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