Exploiting Data Source Distribution to Enhance NVM Reliability

Author:

Berman Amit1ORCID

Affiliation:

1. Samsung Electronics Corporation, Israel

Publisher

ACM

Reference17 articles.

1. 19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming

2. A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface

3. Pekny , " A 1- Tb Density 4b/Cell 3D-NAND Flash on 176- Tier Technology with 4- Independent Planes for Read using CMOS-Under-the- Array ," IEEE International Solid- State Circuits Conference (ISSCC) , pp. 1 - 3 , 2022 . Pekny , "A 1-Tb Density 4b/Cell 3D-NAND Flash on 176-Tier Technology with 4-Independent Planes for Read using CMOS-Under-the-Array," IEEE International Solid- State Circuits Conference (ISSCC), pp. 1-3, 2022.

4. Y. Aiba , " Cryogenic Operation of 3D Flash Memory for New Applications and Bit Cost Scaling with 6-Bit per Cell (HLC) and Beyond ," 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) , pp. 1 - 3 , 2021 . Y. Aiba , "Cryogenic Operation of 3D Flash Memory for New Applications and Bit Cost Scaling with 6-Bit per Cell (HLC) and Beyond," 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), pp. 1-3, 2021.

5. Error characterization, mitigation, and recovery in flash-memory-based solid-state drives;Proceedings of the IEEE,2017

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