High-Endurance Bipolar ReRAM-Based Non-Volatile Flip-Flops with Run-Time Tunable Resistive States-Reference-Cited by-同舟云学术

High-Endurance Bipolar ReRAM-Based Non-Volatile Flip-Flops with Run-Time Tunable Resistive States

Published:2018-07-17 Issue: Volume: Page:
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Container-title:Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures
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Author:

Biglari Mehrdad¹,Lieske Tobias¹,Fey Dietmar¹

Affiliation:

1. Friedrich-Alexander-University, Erlangen-Nürnberg (FAU), Chair of Computer Architecture, Erlangen, Germany

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/3232195.3232217

Reference23 articles.

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2. A nonvolatile memory circuit-a novel approach;Michael M.;JSSC,1969

3. On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

4. PaCC: A parallel compare and compress codec for area reduction in nonvolatile processors;Wang Y.;TVLSI,2014

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