Design and CAD methodologies for low power gate-level monolithic 3D ICs
Author:
Affiliation:
1. Georgia Institute of Technology, Atlanta, USA
2. Qualcomm Research, San Diego, USA
Publisher
ACM
Link
https://dl.acm.org/doi/pdf/10.1145/2627369.2627642
Reference7 articles.
1. Advances in 3D CMOS sequential integration
2. Gate-length biasing for runtime-leakage control
3. Power benefit study for ultra-high density transistor-level monolithic 3D ICs
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