Study of the resistive switching and electrode degradation in Al/TiO2/FTO thin films upon thermal treatment in reducing atmosphere-Reference-Cited by-同舟云学术

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Study of the resistive switching and electrode degradation in Al/TiO2/FTO thin films upon thermal treatment in reducing atmosphere

Published:2021-12-31 Issue:6 Volume:12 Page:783-791
ISSN:2220-8054
Container-title:Nanosystems: Physics, Chemistry, Mathematics
language:
Short-container-title:Nanosystems: Phys. Chem. Math.

Author:

Illarionov G.A.,Kolchanov D.S.,Chrishtop V.V.,Kasatkin I.A.,Vinogradov A.V.,Morozov M.I.

Publisher

ITMO University

Subject

Physics and Astronomy (miscellaneous),Condensed Matter Physics,Materials Science (miscellaneous),Mathematics (miscellaneous)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analog and digital resistive switching in W/TiO₂/ITO devices: the impact of crystallinity and Indium diffusion;Physica Scripta;2024-09-12

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