Breakdown of Rigid-Unit Vibrations in Layered Semiconductors under Pressure: Application to Germanium Sulfide-Reference-Cited by-同舟云学术

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Breakdown of Rigid-Unit Vibrations in Layered Semiconductors under Pressure: Application to Germanium Sulfide

Published:1995-07-20 Issue:3 Volume:31 Page:151-155
ISSN:0295-5075
Container-title:Europhysics Letters (EPL)
language:
Short-container-title:Europhys. Lett.

Author:

Hsueh H. C,Vass H,Clark S. J,Crain J

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1209/0295-5075/31/3/005/pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High pressure studies on layered semiconductor germanium sulphide single crystals grown using different techniques;High Pressure Research;2001-06

2. Compression mechanisms in the anisotropically bonded elements Se and Te;Physical Review B;2000-02-01

3. Compression mechanisms in quasimolecularXI3 (X=As,Sb,Bi)solids;Physical Review B;1998-12-01

4. Vibrational Properties of Liquid Crystal Molecules from AB Initio Computer Simulation;Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals;1997-08

5. Low-frequency dynamics of liquid crystals;Europhysics Letters (EPL);1997-04-10

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