High pressure studies on layered semiconductor germanium sulphide single crystals grown using different techniques-Reference-Cited by-同舟云学术

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High pressure studies on layered semiconductor germanium sulphide single crystals grown using different techniques

Published:2001-06 Issue:1 Volume:21 Page:15-29
ISSN:0895-7959
Container-title:High Pressure Research
language:en
Short-container-title:High Pressure Research

Author:

Solanki G. K.,Patel P. D.,Agarwal M. K.,Vaidya S. N.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/08957950108200999

Reference30 articles.

1. GeS crystalline layers and their properties

2. Photodissolution of silver in amorphous germanium sulphide films

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impedance spectroscopy of synthetic proustite at high pressures;Bulletin of the Russian Academy of Sciences: Physics;2013-03

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