Thermal Behavior of Cu and Ni in Silicon Measured by Photoluminescence and Deep-Level Transient Spectroscopy-Reference-Cited by-同舟云学术

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Thermal Behavior of Cu and Ni in Silicon Measured by Photoluminescence and Deep-Level Transient Spectroscopy

Published:2016 Issue:3 Volume:37 Page:128-133
ISSN:0388-5321
Container-title:Hyomen Kagaku
language:en
Short-container-title:Journal of The Surface Science Society of Japan

Author:

NAKAMURA Minoru¹,MURAKAMI Susumu¹,UDONO Haruhiko¹

Affiliation:

1. College of Engineering, Ibaraki University

Publisher

Surface Science Society Japan

Subject

General Earth and Planetary Sciences,General Engineering,General Environmental Science

Link

https://www.jstage.jst.go.jp/article/jsssj/37/3/37_128/_pdf

Reference38 articles.

1. 1) W.C. Dash: J. Appl. Phys. 27, 1193 (1956).

2. 2) A. Goetzberger and W. Shockley: J. Appl. Phys. 31, 1821 (1960).

3. 3) K. Graff: “Metal Impurities in Silicon-Device Fabrication” (Springer, Berlin, 1995).

4. 4) A.A. Istratov, H. Hieslmair and E.R. Weber: Appl. Phys. A 70, 489 (2000).

5. 5) N.S. Minaev, A.V. Mudryi and V.D. Tkachev: Sov. Phys. Semicond. 13, 233 (1979).

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