Analysis of Nitrogen State on MOS Interface of 4H-SiC m-Face after Nitric Oxide Post Oxidation Annealing (NO-POA)-Reference-Cited by-同舟云学术

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Analysis of Nitrogen State on MOS Interface of 4H-SiC m-Face after Nitric Oxide Post Oxidation Annealing (NO-POA)

Published:2017 Issue:0 Volume:15 Page:109-114
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotech.

Author:

Hamada Kimimori¹²,Mikami Akira¹,Naruoka Hideki¹,Yamabe Kikuo³

Affiliation:

1. Power Electronics Development Division, Toyota Motor Corporation

2. Doctoral Program in Nano-Science and Nano-Technology, Graduate School of Pure and Applied Sciences, University of Tsukuba

3. Graduate School of Pure and Applied Sciences, University of Tsukuba

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

https://www.jstage.jst.go.jp/article/ejssnt/15/0/15_109/_pdf

Reference20 articles.

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2. [2] T. Kimoto, Jpn. J. Appl. Phys. 54, 040103 (2015). ( https://doi.org/10.7567/JJAP.54.040103 )

3. [3] H. Yoshioka, J. Senzaki, A. Shimozato, Y. Tanaka, and H. Okumura, Appl. Phys. Lett. 104, 083516 (2014). ( http://dx.doi.org/10.1063/1.4866790 )

4. [4] G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Lett. 22, 176 (2001). ( https://doi.org/10.1109/55.915604 )

5. [5] J. Rozen, S. Dhar, M. E. Zvanut, J. R. Williams, and L. C. Feldman, J. Appl. Phys. 105, 124506 (2009). ( http://dx.doi.org/10.1063/1.3131845 )

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1. Reaction of NO molecule at 4H-SiC/SiO₂ interface and its orientation dependence: a first-principles study;Japanese Journal of Applied Physics;2024-03-01

2. Density functional theory study on the effect of NO annealing for SiC(0001) surface with atomic-scale steps;Applied Physics Express;2024-01-01

3. X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001);ACS Applied Electronic Materials;2023-06-22

4. Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO₂ interface after NO annealing;Journal of Applied Physics;2022-10-21

5. Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO₂ interfaces;Japanese Journal of Applied Physics;2022-03-25

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