Preparation and Characterization of Ultraclean H:Si(111)-(1*1) Surfaces Studied by HREELS, AFM and STM-STS-Reference-Cited by-同舟云学术

Preparation and Characterization of Ultraclean H:Si(111)-(1*1) Surfaces Studied by HREELS, AFM and STM-STS

Published:2009 Issue: Volume:7 Page:557-562
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotechnol.

Author:

Kato Hiroki¹,Taoka Takumi¹,Suto Shozo¹,Nishikata Susumu²,Sazaki Gen²,Nakajima Kazuo²,Yamada Taro³,Czajka Ryszard⁴,Wawro Andrzej⁵,Kasuya Atsuo⁶

Affiliation:

1. Department of Physics, Graduate School of Science, Tohoku University, Japan

2. Institute for Materials Research, Tohoku University, Japan

3. The Institute of Chemical and Physical Research (RIKEN), Japan

4. Institute of Physics, Faculty of Technical Physics, Poznan University of Technology, Poland

5. Institute of Physics, Polish Academy of Sciences, Poland

6. International Advanced Research and Education Organaization, Tohoku University, Japan

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

http://www.jstage.jst.go.jp/article/ejssnt/7/0/7_0_557/_pdf

Reference40 articles.

1. Ideal hydrogen termination of the Si (111) surface

2. [2] G. S. Higashi and Y. J. Chabal, Handbook of Semiconductor Wafer Cleaning Technology, ed. by W. Kern (William Andrew Publishing, New York, 1993).

3. Atomic-scale defect control on hydrogen-terminated silicon surface at wafer scale

4. Influence of silicon oxide on the morphology of HF‐etched Si(111) surfaces: Thermal versus chemical oxide

5. [5] Y. J. Chabal, M. K. Weldon, K. T. Queeney, and A. Estève, Fundamental Aspects of Silicon Oxidation, ed. by Y. J. Chabal (Springer, Heidelberg, 2001), p. 143.

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