45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications-Reference-Cited by-同舟云学术

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45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications

Published:2011-05 Issue:3 Volume:55 Page:5:1-5:14
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

Iyer S. S.,Freeman G.,Brodsky C.,Chou A. I.,Corliss D.,Jain S. H.,Lustig N.,McGahay V.,Narasimha S.,Norum J.,Nummy K. A.,Parries P.,Sankaran S.,Sheraw C. D.,Varanasi P. R.,Wang G.,Weybright M. E.,Yu X.,Crabbe E.,Agnello P.

Publisher

IBM

Subject

General Computer Science

Link

http://xplorestaging.ieee.org/ielx5/5288520/5730623/05742027.pdf?arnumber=5742027

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon interconnect fabric: A versatile heterogeneous integration platform for AI systems;IBM Journal of Research and Development;2019-11-01

2. Three-dimensional integration: An industry perspective;MRS Bulletin;2015-03

3. Performance-optimized gate-first 22-nm SOI technology with embedded DRAM;IBM Journal of Research and Development;2015-01

4. Design of the IBM Blue Gene/Q Compute chip;IBM Journal of Research and Development;2013-01

5. Resonant body transistors in standard CMOS technology;2012 IEEE International Ultrasonics Symposium;2012-10

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