Affiliation:
1. Arkansas Power Electronics International, Inc.
2. University of Arkansas
3. Rohm, Co. Ltd
Abstract
Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature, high-performance Silicon-Carbide (SiC) based power module with integrated gate driver. This paper presents a description of the single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. The electrical and thermal performance of the system under power is also presented.
Publisher
IMAPS - International Microelectronics Assembly and Packaging Society
Cited by
3 articles.
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