Affiliation:
1. Arkansas Power Electronics International, Inc. (APEI, Inc.)
2. APEI Inc.
3. Arkansas Power Electronics International
Abstract
The demands of modern high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of silicon carbide (SiC) are well known, including high temperature operation, high voltage blocking capability, high speed switching, and high energy efficiency. In this discussion, APEI, Inc. presents two newly developed high performance SiC power modules for extreme environment systems and applications. These power modules are rated to 1200V, are operational at currents greater than 100A, can perform at temperatures in excess of 250 °C, and are designed to house various SiC devices, including MOSFETs, JFETs, or BJTs.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference5 articles.
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3. B. Reese, et al, High Temperature (250°C) Silicon Carbide Power Modules with Integrated Gate Drive Boards, HiTEC, Albuquerque, NM, (2010).
4. E. Cilio, et al, High Temperature, High Frequency SiC Three Phase Inverter for Aircraft Applications, SAE International Power Systems Conference, Ft. Worth, Texas, (2010).
5. E. Cilio, et al, "High Temperature, High Frequency SiC Power Systems for Aircraft Applications, GOMAC Tech, Orlando, Florida, (2011).
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