Study effect of incidence angle on ion implantation in ZnO matrix

Author:

Aissania H., ,Hami K.,Talhi A., ,

Abstract

The ion implantation method is one of the techniques used to dope the materials. The TRIM software (Transport and Range of Ions in Mater) created by Ziegler and colleagues [1] can simulate it. In this work, we studied the effect of incidence angles for different energies on the distribution of implant ions in the target by using the TRIM software, and several processes resulting from the interaction between Potassium ions and the target atoms are examined. Simulated physical effects are intriguing.

Publisher

Virtual Company of Physics

Subject

Surfaces, Coatings and Films,Physics and Astronomy (miscellaneous),Electronic, Optical and Magnetic Materials

Reference7 articles.

1. [1] Myriam Protiere, Synthèse de Nanocristaux Fluorescents de semi-conducteurs II-VI et III- V, Augmentation de l'échelle de synthèse, L'université de Joseph Fourier, (2007).

2. [2] : Bouzina Amina, Étude de l'effet de l'énergie d'implantation sur les profils de distribution du dopant dans le silicium amorphe, Master Académique, Universite Mohamed Boudiaf- M'SILA;

3. [3] : H. Aissani, A. Merabti, R. Abdejbar, M. Douha, Journal of Ovonic Research; Vol. 16, No. 4, July - August 2020, p. 213 - 216 ; https://doi.org/10.15251/JOR.2020.164.213

4. [4] K. Nordlund, J. Peltola, J. Nord, J. Keinonen, Journal of Applied Physics 90, 4 (2001) ; https://doi.org/10.1063/1.1384856

5. [5] : Zakia Tiouti, The secondary effects on the photoelectric properties of photovoltaic devices based on GaAs and II-VI compounds in different geometries, PhD thesis, University Tahri Mohammed Bechar, 2021.

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