SIMULATION STUDY OF THE ION IMPLANTATION ENERGY OF POTASSIUM IN THE ZnO MATRIX
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Published:2020-07
Issue:4
Volume:16
Page:213-216
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ISSN:1584-9953
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Container-title:Journal of Ovonic Research
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language:
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Short-container-title:JOR
Author:
AISSANI H., ,MERABTI A.,ABDEJBAR R.,DOUHA M., , , ,
Abstract
There are many methods used for doping the materials, the ion implantation method is one of those methods. It can be simulated by the TRIM software (Transport and Range of Ions in Mater) developed by Ziegler and al [1]. In this work, using the TRIM software is to study the effect of implantation energy and on distribution of implant ions in the target and to examine the different processes resulting from the interaction between the ions of potassium and the target atoms. Interesting physical effects have been simulated
Publisher
Virtual Company of Physics
Subject
Surfaces, Coatings and Films,Physics and Astronomy (miscellaneous),Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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