Production of PbO thin film using Silar method and electronıc and interface properties of Pb/PbO/p-Si MIS contacts

Abstract

In this paper, using SILAR thin film technique, which is low cost and is easy to control, the lead oxide (PbO) thin film was grown onto both microscope glass and inorganic semiconductor silicon (Si) wafer after appropriate chemical cleaning processes. The coating stage was performed by keeping the solution at 80 ℃. After forming a PbO thin film on the silicon semiconductor, Pb metal was evaporated onto its upper surface. Optical, morphological and structural properties of the PbO thin film formed on glass were investigated. The electrical and interface characteristics of the Pb/PbO/p-Si MIS Schottky diode were investigated in the dark by using current-voltage (I-V), capacity-voltage (C-V) and conductance-voltage (G-V) in 10kHz-2MHz frequency range and capacity-frequency (C-f) characteristics in 1kHz-10MHz frequency range.