Electrical and optical properties of p-Si based structures with lead oxide interfaces-Reference-Cited by-同舟云学术

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Electrical and optical properties of p-Si based structures with lead oxide interfaces

Published:2023-08 Issue: Volume:294 Page:116552
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Aydemir Gökçen Aslan,Akay Defne,Tataroğlu Adem,Ocak Sema Bilge

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference55 articles.

1. Physics of semiconductor devices;Sze,2006

2. Metal semiconductor contacts;Rhoderick,1988

3. Semiconductor physical electronics;Li,2006

4. Semiconductor material and device characterization;Schroder,2006

5. Metal-semiconductor schottky barrier junctions and their applications;Sharma,1984

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3. Analysis of the optical and electronic characteristics of Al/NiPc complex/p-Si diode;Physica Scripta;2024-02-23

4. Structural and Optical Properties of Interfacial InSe Thin Film;ACS Omega;2024-02-09

5. Investigation of Surface Dose Accuracy of Two Dose Calculation Algorithms Using Thermoluminescent Dosimeters;Gazi University Journal of Science Part A: Engineering and Innovation;2023-09-29

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