Structure and electronic properties of thin Ge2Sb2Te5 films produced by DC ion-plasma spattering-Reference-Cited by-同舟云学术

Structure and electronic properties of thin Ge2Sb2Te5 films produced by DC ion-plasma spattering

Published:2023-07 Issue:7 Volume:20 Page:487-496
ISSN:1584-8663
Container-title:Chalcogenide Letters
language:
Short-container-title:CL

Author:

Sultanbekov S., ,Prikhodko O.,Almas N., ,

Abstract

The optical properties of Ge2Sb2Te5 thin films were studied as a function of thickness. An increase in optical band gap with decreasing film thickness has been observed. The current– voltage characteristics measured in Ge2Sb2Te5 thin films in the current mode are studied. A decrease in switching time and threshold voltage with decreasing film thickness is established.

Publisher

Virtual Company of Physics

Subject

General Physics and Astronomy,General Chemistry,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. [1] Kolomiets, B. T. (1964), Physica Status Solidi B. 7 (2): 359-372; https://doi.org/10.1002/pssb.19640070202

2. [2] Kolomiets, B. T. (1964), Physica Status Solidi B. 7 (3): 713-731; https://doi.org/10.1002/pssb.19640070302

3. [3] Ovshinsky, S. R. (1968), Physical review letters, 21(20), 1450; https://doi.org/10.1103/PhysRevLett.21.1450

4. [4] Mott, N. F. (1969), Philosophical Magazine, 19(160), 835-852; https://doi.org/10.1080/14786436908216338

5. [5] Bogoslovskiy, N. A., & Tsendin, K. D. (2012), Semiconductors, 46, 559-590; https://doi.org/10.1134/S1063782612050065

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1. Effect of Bi addition on the switching effect and structure of thin Ge2Sb2Te5 films prepared by ion-plasma RF co-sputtering;Journal of Non-Crystalline Solids;2024-10

2. Effects of thermal and laser annealing on the structure of Ge2Sb2Te5 thin films;Chalcogenide Letters;2024-09