Application of Ion Implantation for Intermediate Energy Levels Formation in the Silicon-Based Structures Dedicated for Photovoltaic Purposes-Reference-Cited by-同舟云学术

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Application of Ion Implantation for Intermediate Energy Levels Formation in the Silicon-Based Structures Dedicated for Photovoltaic Purposes

Published:2017-08 Issue:2 Volume:132 Page:274-277
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Billewicz P.¹,Węgierek P.¹,Grudniewski T.²,Turek M.³

Affiliation:

1. Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

2. Pope John Paul II State School of Higher Vocational Education, Sidorska 95/97, 21-500 Biała Podlaska, Poland

3. Institute of Physics, Maria Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of poly-energy implantation with H+ ions for additional energy levels formation in GaAs dedicated to photovoltaic cells;Archives of Electrical Engineering;2024-01-02

2. Photovoltaic Cell Generations and Current Research Directions for Their Development;Materials;2022-08-12

3. Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells;Materials;2021-11-17

4. Infrared absorption and sub-bandgap photo-response of hyperdoped silicon by ion implantation and ultrafast laser melting;Journal of Alloys and Compounds;2021-11

5. Influence of Substrate Type and Dose of Implanted Ions on the Electrical Parameters of Silicon in Terms of Improving the Efficiency of Photovoltaic Cells;Energies;2020-12-19

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