Application of poly-energy implantation with H+ ions for additional energy levels formation in GaAs dedicated to photovoltaic cells
Author:
Publisher
Polish Academy of Sciences Chancellery
Subject
General Engineering
Link
https://journals.pan.pl/Content/114132/PDF/15_AEE-2019-4_INTERNET.pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal Desorption of Argon Implanted into Gallium Arsenide;Advances in Science and Technology Research Journal;2022-10-01
2. Photovoltaic Cell Generations and Current Research Directions for Their Development;Materials;2022-08-12
3. Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells;Materials;2021-11-17
4. Influence of Substrate Type and Dose of Implanted Ions on the Electrical Parameters of Silicon in Terms of Improving the Efficiency of Photovoltaic Cells;Energies;2020-12-19
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