Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors-Reference-Cited by-同舟云学术

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Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors

Published:2005-01 Issue:1 Volume:107 Page:174-178
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Sherliker B.¹,Halsall M.P.¹,Harrison P.²,Jovanović V.D.²,Indjin D.²,Ikonić Z.²,Parbrook P.J.³,Whitehead M.A.³,Wang T.³,Buckle P.D.⁴,Phillips J.⁵,Carder D.⁵

Affiliation:

1. Department of Physics, UMIST, Manchester M60 1QD, UK

2. Department of Electronic and Electrical Engineering, The University of Leeds, LS2 9JT, Leeds, UK

3. EPSRC National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, UK

4. Qinetiq PLC, St Andrews Road, Great Malvern, UK

5. FELIX Facility, FOM Rijnhuizen, Nieuwegein, The Netherlands

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range;Semiconductor Science and Technology;2007-10-15

2. Resonant tunneling effect in metal-semiconductor-metal ultraviolet detectors grown with AlGaN∕GaN multi-quantum-well interlayer;Applied Physics Letters;2006-07-31

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