Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range-Reference-Cited by-同舟云学术

Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range

Published:2007-10-15 Issue:11 Volume:22 Page:1240-1244
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Sherliker Ben,Halsall Matthew,Kasalynas Irmantas,Seliuta Dalius,Valusis Gintaras,Vengris Mikas,Barkauskas Martynas,Sirutkaitis Valdas,Harrison P,Jovanovic V D,Indjin D,Ikonic Z,Parbrook P J,Wang T,Buckle P D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. QWIP or other alternative for third generation infrared systems

3. Imaging: The road ahead for car night-vision

4. Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells

5. Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy

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