Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications-Reference-Cited by-同舟云学术

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Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications

Published:2013-11 Issue:5 Volume:124 Page:869-872
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Wachnicki L.¹,Gieraltowska S.¹,Witkowski B.S.¹,Figge S.²,Hommel D.²,Guziewicz E.¹,Godlewski M.¹³

Affiliation:

1. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

2. University of Bremen Institute of Solid State Physics Semiconductor Epitaxy, Otto-Hahn-Allee NW1, D-28359 Bremen, Germany

3. Cardinal Stefan Wyszyński University, College of Science, Department of Mathematics and Natural Sciences, Warszawa, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photovoltaic Cell Based on n-ZnO Microrods and p-GaN Film;Acta Physica Polonica A;2023-10

2. Effect of water flow rate on properties of zinc oxide thin films prepared using spatial atomic layer deposition;Thin Solid Films;2022-06

3. Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts;Journal of Electronic Materials;2021-01-21

4. Large area ultraviolet photodetector on surface modified Si:GaN layers;Applied Surface Science;2018-03

5. Photoresistor based on ZnO nanorods grown on a p-type silicon substrate;Opto-Electronics Review;2017-05

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