Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations-Reference-Cited by-同舟云学术

Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations

Published:2017-07-07 Issue:3 Volume:268 Page:230-238
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:Journal of Microscopy

Author:

OHNO Y.¹^ORCID,INOUE K.¹,FUJIWARA K.¹,KUTSUKAKE K.¹,DEURA M.¹,YONENAGA I.¹,EBISAWA N.²,SHIMIZU Y.²,INOUE K.²,NAGAI Y.²,YOSHIDA H.³,TAKEDA S.³,TANAKA S.⁴,KOHYAMA M.⁴

Affiliation:

1. Institute for Materials Research; Tohoku University; Katahira 2-1-1, Aoba-ku Sendai 980-8577 Japan

2. The Oarai Center, Institute for Materials Research (IMR); Tohoku University; Oarai Ibaraki, 311-1313 Japan

3. The Institute of Scientific and Industrial Research (ISIR); Osaka University; 8-1 Mihogaoka, Ibaraki Osaka 567-0047 Japan

4. Department of Energy and Environment, Research Institute of Electrochemical Energy; National Institute of Advanced Industrial Science and Technology (AIST); 1-8-31 Midorigaoka, Ikeda Osaka 563-85777 Japan

Funder

JSPS KAKENHI

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jmi.12602/fullpdf

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3. Electron trapping and impurity segregation without defects: ab initio study of perfectly rebonded grain boundaries;Arias;Phys. Rev. B,1994