Electron trapping and impurity segregation without defects:Ab initiostudy of perfectly rebonded grain boundaries
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.4525/fulltext
Reference32 articles.
1. Thermal expansion ofc-Si viaab initiomolecular dynamics
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5. Theory of Hydrogen Diffusion and Reactions in Crystalline Silicon
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