Use of Volume Element Methods to Understand Experimental Differences in Active/Passive Transitions and Active Oxidation Rates for SiC

Author:

Kubota Y.1,Hatta H.2,Yoshinaka T.3,Kogo Y.4,Goto T.5,Rong T.6

Affiliation:

1. The Graduate University for Advanced Studies; Department of Space and Astronautical Science; Sagamihara Kanagawa Japan

2. Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency; Sagamihara Japan

3. Japan Aerospace Exploration Agency; Aerospace Research and Development Directorate; Chofu Japan

4. Department of materials science and technology; Tokyo University of Science; Noda Japan

5. Institute for Materials Research; Tohoku University; Sendai Japan

6. State Key Lab of Advanced Technology for Materials Synthesis and Processing; Wuhan University of Technology; Wuhan China

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Reference19 articles.

1. High Temperature Oxidation of SiC Under Helium With low-Pressure Oxygen-Partt 1: Sintered α-SiC;Charpentier;J. Eur. Ceram. Soc.,2010

2. High Temperature Oxidation of SiC Under Helium With low-Pressure Oxygen-Partt 2: CVD β-SiC;Charpentier;J. Eur. Ceram. Soc.,2010

3. Determination of the Active-to-Passive Transition in the Oxidation of Silicon Carbide in Standard and Microwave-Excited Air;Balat;J. Eur. Ceram. Soc.,1996

4. Active Oxidation of SiC;Jacobson;Oxid. Met.,2011

5. High-Temperature Oxidation of CVD Silicon-Based Ceramics;Goto;Am. Ceram. Soc.,1996

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