High temperature oxidation of SiC under helium with low-pressure oxygen—Part 1: Sintered α-SiC
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Ceramics and Composites
Reference10 articles.
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3. The active oxidation of silicon and silicon carbide in the viscous gas flow regime;Hinze;J Electrochem Soc,1976
4. Behavior of SiC at high temperature under helium with low oxygen partial pressure;Eck;J Eur Ceram Soc,2008
5. Mass spectrometric study of oxidation of SiC in low-pressure oxygen;Ogura;J Electrochem Soc,2002
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