Active-to-Passive Transition in the Oxidation of Silicon Carbide and Silicon Nitride in Air
Author:
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1151-2916.1990.tb09793.x/fullpdf
Reference15 articles.
1. The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10[sup −3] to 5 × 10[sup −1] Torr Oxygen Pressure
2. The Active Oxidation of Si and SiC in the Viscous Gas‐Flow Regime
3. Passivity during the Oxidation of Silicon at Elevated Temperatures
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