Annealing of amorphous layer in S+ implanted GaAs by electron beam inside the electron microscope-Reference-Cited by-同舟云学术

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Annealing of amorphous layer in S+ implanted GaAs by electron beam inside the electron microscope

Published:1985-09 Issue:3 Volume:139 Page:313-320
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:

Author:

Rai A. K.,Bhattacharya R. S.

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1365-2818.1985.tb02647.x/fullpdf

Reference9 articles.

1. Damage annealing behaviour of Se implanted GaAs;Bhattacharya;J. Phys. Chem. Solids,1983

2. Laser pulse annealing of ion implanted GaAs;Campisano;J. appl. Phys.,1979

3. Ion implantation and low temperature epitaxial regrowth of GaAs;Grimaldi;J. appl. Phys.,1981

4. Explosive crystallization of amorphous Ge;Leamy;Appl. Phys. Lett.,1981

5. Explosive recrystallization of ion implanted amorphous Si layers;Narayan;MRS Symp. Proc.,1983

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