Interstitial Supersaturation And Climb Of Misfit Dislocations In Phosphorus-Diffused Silicon
Author:
Publisher
Wiley
Subject
Histology,Pathology and Forensic Medicine
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1365-2818.1980.tb00243.x/fullpdf
Reference20 articles.
1. On the growth of stacking faults and dislocations induced in silicon by phosphorus predeposition;Armigliato;J. appl. Phys.,1977
2. Effects of high phosphorus concentration on diffusion into silicon;Duffy;J. Electrochem. Soc.,1968
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