Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high-order Laue zone line profiles-Reference-Cited by-同舟云学术

Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high-order Laue zone line profiles

Published:2007-05 Issue:2 Volume:226 Page:140-155
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:J Microsc

Author:

SPESSOT A.,FRABBONI S.,BALBONI R.,ARMIGLIATO A.

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1365-2818.2007.01760.x/fullpdf

Reference37 articles.

1. Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED

2. A. Armigliato, R. Balboni, and S. Frabboni (2000 ) Assessment of the TEM/CBED procedure for strain determination in <130> zone axis .Deliverable D2, European Project STREAM IST-1999-10341 (2000-2002) (http://stream.bo.cnr.it).

3. Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

4. nlinImproving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures

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