The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template-Reference-Cited by-同舟云学术

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Published:2017-10-08 Issue:3 Volume:268 Page:269-275
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:Journal of Microscopy

Author:

BEN AMMAR H.¹^ORCID,MINJ A.¹,CHAUVAT M.-P.¹,GAMARRA P.²,LACAM C.²,MORALES M.¹,RUTERANA P.¹

Affiliation:

1. Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP) UMR6252, CNRS-ENSICAEN-CEA-UCN. 6; Boulevard Maréchal Juin; 14050 Caen Cedex 4 France

2. III-V Lab; Thales Research and Technology; 1 Avenue Augustin Fresnel. 91767 Palaiseau France

Funder

Agence Nationale de la Recherche

Région Normandie

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jmi.12651/fullpdf

Reference37 articles.

1. High optical quality AlInGaN by metalorganic chemical vapor deposition;Aumer;Appl. Phys. Lett.,1999