Temperature Dependence of Electrical Resistivity (4-300 K) in Aluminum- and Boron-Doped SiC Ceramics-Reference-Cited by-同舟云学术

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Temperature Dependence of Electrical Resistivity (4-300 K) in Aluminum- and Boron-Doped SiC Ceramics

Published:2013-04-21 Issue:8 Volume:96 Page:2525-2530
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J. Am. Ceram. Soc.

Author:

Kim Kwang Joo¹,Lim Kwang-Young²,Kim Young-Wook²,Kim Hyoung Chan³

Affiliation:

1. Department of Physics; Konkuk University; Seoul 143-701 Korea

2. Functional Ceramics Laboratory; Department of Materials Science and Engineering; University of Seoul; Seoul 130-743 Korea

3. National Fusion Research Institute; Daejeon 305-333 Korea

Funder

Basic Science Research Program through the National Research Foundation of Korea

Ministry of Education, Science and Technology, Republic of Korea

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.12351/fullpdf

Reference42 articles.

1. Oxidation and Burner Rig Corrosion of Liquid Phase Sintered SiC;Baxter;J. Eur. Ceram. Soc.,2000

2. Electrical and Thermal Conductivity of Liquid Phase Sintered SiC;Volz;J. Eur. Ceram. Soc.,2001

3. Microstructural Changes in Liquid-Phase-Sintered Silicon Carbide During Creep in an Oxidizing Environment;Schneider;J. Am. Ceram. Soc.,2003

4. Influence of Long Term Oxidation on the Microstructure, Mechanical and Electrical Properties of Pressureless Sintered AlN-SiC-MoSi2 Ceramic Composites;Krnel;J. Eur. Ceram. Soc.,2003

5. Nanoindentation Characterization of Submicro- and Nano-Sized Liquid-Phase-Sintered SiC Ceramics;Guicciardi;J. Am. Ceram. Soc.,2004

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