Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2 /H2 Plasma-Reference-Cited by-同舟云学术

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Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2 /H2 Plasma

Published:2014-09-06 Issue:12 Volume:97 Page:4052-4059
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J. Am. Ceram. Soc.

Author:

Haider Ali¹²,Ozgit-Akgun Cagla¹,Goldenberg Eda¹,Okyay Ali Kemal¹²³,Biyikli Necmi¹²

Affiliation:

1. National Nanotechnology Research Center (UNAM); Bilkent University; Bilkent Ankara 06800 Turkey

2. Institute of Materials Science and Nanotechnology; Bilkent University; Bilkent Ankara 06800 Turkey

3. Department of Electrical and Electronics Engineering; Bilkent University; Bilkent Ankara 06800 Turkey

Funder

Ministry of Development of Turkey

National Nanotechnology Research Center Project

Scientific and Technological Research Council of Turkey

FP-7 Marie Curie International Re-integration Grant

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.13213/fullpdf

Reference42 articles.

1. Direct-Bandgap Properties and Evidence for Ultraviolet Lasing of Hexagonal Boron Ntride Single Crystal;Watanabe;Nat. Mater.,2004

2. Boron Nitride Substrates for High-Quality Graphene Electronics;Dean;Nat. Nanotechnol.,2010

3. Synthetic Routes to Boron Nitride;Paine;Chem. Rev.,1990

4. Far-Ultraviolet Plane-Emission Handheld Device Based on Hexagonal Boron Nitride;Watanabe;Nat. Photon,2009

5. Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure;Kubota;Science,2007

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