How important is the {103} plane of stable Ge2 Sb2 Te5 for phase-change memory?-Reference-Cited by-同舟云学术

How important is the {103} plane of stable Ge2 Sb2 Te5 for phase-change memory?

Published:2015-03-21 Issue:1 Volume:259 Page:10-15
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:Journal of Microscopy

Author:

ZHANG W.¹²,ZHENG W.T.¹,KIM J.-G.³,CUI X.Q.¹,LI L.⁴,QI J.G.⁵,KIM Y.-J.³,SONG S.A.⁶²

Affiliation:

1. Department of Materials Science, and Key Laboratory of Mobile Materials MOE, and State Key Laboratory of Superhard Materials; Jilin University; Changchun China

2. Computational and Analytical Science Center; Samsung Advanced Institute of Technology; Yongin South Korea

3. Korea Basic Science Institute; Daejeon South Korea

4. School of Electronic and Information Engineering; Changchun University; Changchun China

5. School of Material Science & Engineering; Liaoning University of Technology; Jinzhou China

6. Dongjin Semichem Co. Ltd.; Hwaseong South Korea

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jmi.12242/fullpdf

Reference36 articles.

1. Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials;Caravati;Appl. Phys. Lett.,2007

2. Insights into the structure of the stable and metastable (GeTe)(m)(Sb2Te3)(n) compounds;Da Silva;Phys. Rev. B.,2008

3. Investigation of thermal expansion measurement of brass strip H62 after high current density electropulsing by the CCD technique;He;Mater. Sci. Eng. A.,2000

4. Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials;Hegedus;Nat. Mater.,2008

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1. Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate;2022 IEEE International Memory Workshop (IMW);2022-05

2. The origin of hexagonal phase and its evolution process in Ge₂Sb₂Te₅ alloy;APL Materials;2022-02-01

3. Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5;Communications Chemistry;2019-02-01

4. Phase change thin films for non-volatile memory applications;Nanoscale Advances;2019

5. Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film;Scientific Reports;2017-07-19