Preparation of Highly Oriented Aluminum Nitride Thin Films on Polycrystalline Substrates by Helicon Plasma Sputtering and Annealing
Author:
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1151-2916.2001.tb00937.x/fullpdf
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2. Influence of Substrate Temperature on Physical Structure of AIN Thin Films Prepared on Polycrystalline MoSi2 by rf Magnetron Sputtering;Akiyama;J. Am. Ceram. Soc.,1995
3. Measurement of Stress Distribution in Si3N4 using AlN Thin Films;Akiyama;J. Mater. Sci. Lett.,1998
4. Aluminum Nitride;Komeya;Chem. Chem. Ind.,1971
5. Basal Orientation Aluminum Nitride Grown at Low Temperature by rf Diode Sputtering;Aita;J. Appl. Phys.,1982
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