Formation of Silicon Nitride Film by Plasma Decomposition of Methylsilazane
Author:
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1151-2916.1995.tb08509.x/fullpdf
Reference10 articles.
1. Formation of Yttria-Stabilized Zirconia Film by Plasma MOCVD;Uyama;Denki Kagaku.,1990
2. Thermodynamic Modeling of MOCVD of Yttria Barium Copper Oxide (YBa2Cu3O7-x): Influence of Metal Precursors and Oxygen Sources;Haarsta;J. Cryst. Growth.,1991
3. Organometallic Chemical Vapor Deposition of Strontium Titanate;Feil;J. Appl. Phys.,1990
4. Preparation and Properties of Aluminum Nitride Films Using an Organometallic Precursor;Interrante;J. Electrochem. Soc.,1989
5. Low-Temperature Metal Organic Chemical Vapor Deposition of Silicon Nitride;Du;J. Am. Ceram. Soc.,1990
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1. ChemInform Abstract: Formation of Silicon Nitride Film by Plasma Decomposition of Methylsilazane.;ChemInform;2010-08-17
2. Manufacturing and High Temperature Mechanical Properties of Si-N-O Ceramic Fibers;Journal of the Ceramic Society of Japan;1998
3. Quantum chemical study of reaction path for NH (a1Δ) with SiH4;Applied Surface Science;1997-06
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5. Deposition of gallium nitride thin films by MOCVD in microwave plasma;Plasma Chemistry and Plasma Processing;1997
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