Analysis of the Pyrolysis Products of Dimethyldichlorosilane in the Chemical Vapor Deposition of Silicon Carbide in Argon

Author:

Cagliostro Domenick E.,Riccitiello Salvatore R.,Carswell Marty G.

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Reference28 articles.

1. 1. N. G. Slavin, and A. A. Peltyukhim , "Deposition of Silicon Carbide Coatings," USSR Pat. No. 145 106, 1962 (Chemical Abstracts No. 57:8694, 1962 ).

2. 2. E. Enk, and Nickl , "Crystalline High-Purity Silicon Carbide," Ger. Pat. No. 1047 180, 1958 (CA 55:920f, 1961 ).

3. 3. S. Susman, R. S. Springs, and H. S. Weber , Silicon Carbide, A High Temperature Semiconductor ; pp.94 109 . Pergamon Press, Oxford, U.K., 1960 .

4. Formation of carbon-excess SiC from pyrolysis of CH3SiCl3

5. 5. H. Lydtin, and B. Lersmacher , "Deposition in Porous Materials," Ger. Pat. No. 2 317 267, 1974 .

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