Author:
Tavernier Philip R.,Clarke David R.
Subject
Materials Chemistry,Ceramics and Composites
Reference17 articles.
1. Anisotropic Epitaxial Lateral Growth in GaN Selective Area Epitaxy,;Kapolnek;Appl. Phys. Lett.,1997
2. Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate,;Ashby;Appl. Phys. Lett.,2000
3. Preparation and Properties of Vapor-Deposited Single-Crystalline GaN,;Maruska;Appl. Phys. Lett.,1969
4. Continuous-Wave Operation of InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates,;Nakamura;Appl. Phys. Lett.,1998
5. GaN Growth Using GaN Buffer Layer,;Nakamura;Jpn. J. Appl. Phys., Part 2,1991
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献