Oxidation of Silicon and Silicon Carbide in Ozone-Containing Atmospheres at 973 K
Author:
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1151-2916.2002.tb00402.x/fullpdf
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4. Hydrogen-Related Leakage Currents Induced in Ultrathin SiO2/Si Structures by Vacuum Ultraviolet Radiation;Afanas'cv;J. Electrochem. Soc.,1999
5. Aspects of Defects in Silica Related to Dielectric Breakdown of Gate Oxides in MOSFETs;Blochl;Physica B,1999
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