CHANGES IN PHOTOELECTRONIC BEHAVIOR OF GLASSES DURING STRUCTURAL RELAXATION-Reference-Cited by-同舟云学术

CHANGES IN PHOTOELECTRONIC BEHAVIOR OF GLASSES DURING STRUCTURAL RELAXATION

Published:1981-10 Issue:1 Structure and Volume:371 Page:170-185
ISSN:0077-8923
Container-title:Annals of the New York Academy of Sciences
language:en
Short-container-title:Ann NY Acad Sci

Author:

Abkowitz M.

Publisher

Wiley

Subject

History and Philosophy of Science,General Biochemistry, Genetics and Molecular Biology,General Neuroscience

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1749-6632.1981.tb55449.x/fullpdf

Reference16 articles.

1. 1. M. Abkowitz, and D. M. Pai. 1977 . Proc. 7th Int. Conf. on Amorphous and Liquid Semiconductors, Edinburgh, Scotland 1977. Center for Industrial Consultancy and Liaison, University of Edinburgh, Edinburgh, Scotland.

2. Photoelectronic behavior ofa-Se and somea-Se: As alloys in their glass transition regions

3. Structural relaxation as a tool for probing the origin of electronic gap states in amorphous chalcogenides

4. Observation of Dipolar Activity in Amorphous Se and Some of Its As Alloys

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