Structural relaxation as a tool for probing the origin of electronic gap states in amorphous chalcogenides
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Photoconductivity and Related Phenomena;Enck,1976
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4. Proceedings of the International Conference on the Physics of Selenium and Tellurium;Abkowitz,1979
5. States in the gap and recombination in amorphous semiconductors
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1. Structure and dynamics of selenium chain melts: A molecular dynamics study;The Journal of Chemical Physics;1993-11
2. An iterative procedure for improved xerographic spectroscopy analysis of gap states in amorphous semiconductors;Semiconductor Science and Technology;1991-01-01
3. Transient hole transport behavior of amorphous arsenic triselenide near its glass transition temperature;Journal of Non-Crystalline Solids;1991-01
4. Calorimetric measurement of structural relaxation in chalcogenide and metallic glasses;Journal of Thermal Analysis;1989-06
5. Reversible structural relaxation in metallic glasses;Materials Science and Engineering;1988-01
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