Extremely Thin Al2 O3 Surface-Passivated Nanocrystalline ZnO Thin-Film Transistors Designed for Low Process Temperature

Author:

Ahn Cheol Hyoun1,Kim So Hee1,Kim Yong-Hoon1,Cho Hyung Koun1

Affiliation:

1. School of Advanced Materials Science and Engineering; Sungkyunkwan University; 2066 Seobu-ro Jangan-gu, Suwon Gyeonggi-do 440-746 Korea

Funder

National Research Foundation of Korea

Basic Research Laboratory project of the Korea government

Ministry of Science, ICT and Future Planning

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Reference29 articles.

1. Repeated Temperature Modulation Epitaxy for P-Type Doping and Light-Emitting Diode Based on ZnO;Tsukazaki;Nature Mater,2005

2. Zinc Oxide Nanostructures: Growth, Properties and Applications;Wang;J. Phys.: Condens. Matter,2004

3. UV-Activated Room-Temperature Gas Sensing Mechanism of Polycrystalline ZnO;Fan;Appl. Phys. Lett.,2009

4. ZnO-Based Transparent Thin-Film Transistors;Hoffman;Appl. Phys. Lett.,2003

5. Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors;Nomura;Nature,2004

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