Development of Hydrogen Gas Sensors Using Quartz Resonator
Author:
Affiliation:
1. Graduate School of Information, Production and Systems, Waseda University
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Mechanical Engineering
Link
http://www.jstage.jst.go.jp/article/ieejsmas/131/3/131_3_117/_pdf
Reference10 articles.
1. (1) C. Nylander, M. Armgarth, and C. Svensson : “Hydrogen induced drift in palladium gate metal-oxide-semiconductor structures”, Journal of Applied Physics, Vol. 56, pp. 1177-11884 (1984-8)
2. (2) U. Ackelid, M. Armgarth, A. Spetz, and I. Lundstrom : “Ethanol Sensitivity of Palladium-Gate Metal-Oxide-Semiconductor Structures”, IEEE Electron Device, Vol. 7, pp. 353-355 (1986-6)
3. (3) P. Pandey, J. K. Srivastavaa, V. N. Mishraa, and R. Dwivedia : “Pd gate MOS sensor for hydrogen detection”, Solid State Sciences, Vol. 11, pp. 1370-1374 (2009-8)
4. Temperature Control and Packaging Optimization of the Integrated Hydrogen Sensor
5. (5) T. Yamaguchi, T. Kiwa, K. Tsukada, and K. Yokosawa : “Oxygen interference mechanism of platinum-FET hydrogen gas sensor”, Sensors and Actuators A: Physical, Vol. 136, pp. 244-248 (2007-5)
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