Crystal Growth of PZT Thin Film on Combination with Metal Electrode and Conductive Oxide Layer
Author:
Affiliation:
1. Nagano Prefecture General Industrial Technology Center
2. Faculty of Engineering, Shinshu University
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Mechanical Engineering
Link
https://www.jstage.jst.go.jp/article/ieejsmas/138/11/138_495/_pdf
Reference30 articles.
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2. (2) B. Wang, H. L. W. Chan, K. W. Kwok, B. Ploss, C. L. Choy, and K. Y. Tong : “Effect of fatigue on the pyroelectric and dielectric properties of PZT films”, J. Eur. Ceram. Soc., Vol. 21, pp. 1589-1592 (2001)
3. (3) Y. Jeong, H. Lee, S. Lee, J. Kim, H. Kim, S. Jeong, and C. Cho : “Annealing effect of platinum-based electrodes on physical properties of PZT thin films”, Current Applied Physics, Vol. 9, pp. 115-119 (2009)
4. (4) W.-C. Shih, Z.-Z. Yen, and Y.-S. Liang : “Preparation of highly C-axis-oriented PZT films on Si substrate with MgO buffer layer by the sol-gel method”, J. Physics and Chemistry of Solids, Vol. 69, pp. 593-596 (2008)
5. (5) T. Ohno, K. Fukumitsu, T. Honda, S. Hirai, T. Arai, N. Sakamoto, N. Wakiya, H. Suzuki, and T. Matsuda : “Orientation control of SrRuO3 thin film on a Si substrate by chemical solution deposition for an electrode of lead zirconate titanate thin films”, Materials Letters, Vol. 181, pp. 74-77 (2016)
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