Area-selective Cu Film Growth on TiN and SiO2 by Supercritical Fluid Deposition

Author:

Usami Naoto1,Ota Etsuko2,Higo Akio2,Momose Takeshi3,Mita Yoshio1

Affiliation:

1. Department of Electrical Engineering and Information Systems (EEIS), The University of Tokyo

2. VLSI Design and Education Center (VDEC), The University of Tokyo

3. Department of Materials Engineering, The University of Tokyo

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Reference22 articles.

1. (1) P. Van Der Putte, D. K. Sadana, E. K. Broadbent, and A. E. Morgan: “Growth 160 of selective tungsten films on self-aligned CoSi2 by low pressure chemical vapor deposition”, Applied Physics Letters, Vol. 49, No. 13, pp. 1723-1725 (1986)

2. (2) Y. Shacham-Diamand, T. Osaka, Y. Okinaka, A. Sugiyama, and V. Dubin: “30 Years of electroless plating for semiconductor and polymer micro-systems”, Microelectronic Engineering, Vol. 132, pp. 35-45 (2015)

3. (3) M. Fang and J. C. Ho: “Area-selective atomic layer deposition: Conformal coating, subnanometer thickness control, and smart positioning”, ACS Nano, Vol. 9, No. 9, pp. 8651-8654 (2015)

4. (4) Y. Au, Y. Lin, H. Kim, E. Beh, Y. Liu, and R. G. Gordon: “Selective chemical vapor deposition of manganese self-aligned capping layer for Cu interconnections in microelectronics”, Journal of The Electrochemical Society, Vol. 157, No. 6, pp. D341-D345 (2010)

5. (5) K. Cheng, M. H. Yang, W. W. Chiu, C. Y. Huang, T. F. Ying, Y. Yang: “Ink-jet printing, self-assembled polyelectrolytes, and electroless plating: Low cost fabrication of circuits on a flexible substrate at room temperature”, Macromolecular Rapid Communications, Vol. 26, No. 4, pp. 247-264 (2005)

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