High Quality GaAs on Si Substrate by Epitaxial Lift-off Using SeS<sub>2</sub> and its Application to Devices-Reference-Cited by-同舟云学术

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High Quality GaAs on Si Substrate by Epitaxial Lift-off Using SeS₂ and its Application to Devices

Published:2003 Issue:12 Volume:123 Page:553-559
ISSN:1341-8939
Container-title:IEEJ Transactions on Sensors and Micromachines
language:en
Short-container-title:IEEJ Trans. SM

Author:

Taguchi Hironori¹²,Soga Tetsuo¹,Jimbo Takashi¹,Umeno Masayoshi³

Affiliation:

1. Nagoya Institue of Technology

2. Lecip Corporation

3. Chubu University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

http://www.jstage.jst.go.jp/article/ieejsmas/123/12/123_12_553/_pdf

Reference5 articles.

1. (2) J. Arokiaraj, H. Okui, T. Soga, T. Jimbo, and M. Umeno : Technical Digest of the International PVSEC-11, Sapporo, Japan, pp. 825-826 (1999)

2. (3) H. Okui, J. Arokiaraj, H. Taguchi, T. Soga, T. Jimbo, and M. Umeno : Technical Digest of the International PVSEC-11, Sapporo, Japan, pp. 823-824 (1999)

3. Dislocation interactions in strained-layer structures grown on GaAs and Si substrates

4. Substrate free GaAs photovoltaic cells on Pd-coated silicon with a 20% AM1.5 efficiency

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