Dislocation interactions in strained-layer structures grown on GaAs and Si substrates-Reference-Cited by-同舟云学术

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Dislocation interactions in strained-layer structures grown on GaAs and Si substrates

Published:1988 Issue:1-4 Volume:93 Page:449-458
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hamaguchi N.,Humphreys T.P.,Moore D.J.,Parker C.A.,Bedair S.M.,Tarn J.C.L.,Jiang B.-L.,El-Masry N.,Radzimski Z.J.,Rozgonyi G.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Strained-layer superlattices: A brief review

2. A new GaAsP—InGaAs strained-layer super-lattice light-emitting diode

3. Defect reduction in GaAs epitaxial layers using a GaAsP‐InGaAs strained‐layer superlattice

4. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

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1. Heteroepitaxial Growth of III-V Semiconductors on Silicon;Crystals;2020-12-21

2. High Quality GaAs on Si Substrate by Epitaxial Lift-off Using SeS₂ and its Application to Devices;IEEJ Transactions on Sensors and Micromachines;2003

3. Influence of structural defects on carrier recombination and current gain in an InGaAs/AlGaAs/GaAs heterojunction phototransistor;Journal of Applied Physics;1996-05-15

4. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy;Advances in Physics;1996-04

5. Cross-slip in the first stages of plastic relaxation in InxGa1-xAs/GaAs heterostructures;Philosophical Magazine A;1994-05-01

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