Development of InGaAs photodiodes for near-infrared spectroscopy
Author:
Affiliation:
1. Yokogawa Electric Co.
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Mechanical Engineering
Link
https://www.jstage.jst.go.jp/article/ieejsmas/122/1/122_1_29/_pdf
Reference15 articles.
1. (1) R.R. Saxena, S.B. Hyder, P.E. Gregory and J.S. Escher, Vapor phase epitaxial growth of InGaAs/InAsP heterojunctions for long wavelength transferred electron photocathodes, J. Crystal Growth 50, pp. 481-484, 1980.
2. (2) K. Makita, T. Torikai, H. Ishihara and K. Taguchi, Ga1-yInyAs/InAsxP1-x(y>0.53, x>0)pin photodiodes for long wavelength regions (λ>2 mm) grown by hydride vapor phase epitaxy, Electron. Lett. 24, pp. 379-380, 1988.
3. (3) R.U. Martinelli, T.J. Zamerowski and P.A. Longeway, 2.6 μm InGaAs photodiodes, Appl. Phys. Lett. 53, pp. 989-991, 1988.
4. (4) K.R. Linga, G.H. Olsen, V.S. Ban, A.M. Joshi and W.F. Kosonocky, Dark current analysis and characterization of InxGa1-xAs/InAsyP1-y graded photodiodes with x>0.53 for response to longer wavelengths (>1.7 μm), J. Lightwave Technol. 10, pp. 1050-1055, 1992.
5. (5) M.A. Di, Forte-Poisson, C. Brylinski, Di Persio, J.X. Hugon, B. Vilotecg and C. Le Noble, InxGa1-xAs/InAsyP1-y photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOVPE, J. Crystal Growth 124, pp. 782-791, 1992.
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